Part Number Hot Search : 
CY7C14 NJM3403 24AA0 LBN07 7067525 CD4053B RB4812 26705VUQ
Product Description
Full Text Search
 

To Download AM29LV800BB-90DW5C Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  supplement publication# 21356 rev: b amendment/ +1 issue date: march 1998 am29lv800b known good die 8 megabit (1 m x 8-bit/512 k x 16-bit) cmos 3.0 volt-only, boot sector flash memorydie revision 1 distinctive characteristics n single power supply operation 2.7 to 3.6 v for read, program, and erase operations ideal for battery-powered applications n manufactured on 0.35 m m process technology n high performance 90 or 120 ns access time n low power consumption (typical values at 5 mhz) 200 na automatic sleep mode current 200 na standby mode current 7 ma read current 15 ma program/erase current n flexible sector architecture one 16 kbyte, two 8 kbyte, one 32 kbyte, and fifteen 64 kbyte sectors (byte mode) one 8 kword, two 4 kword, one 16 kword, and fifteen 32 kword sectors (word mode) supports full chip erase sector protection features: a hardware method of locking a sector to prevent any program or erase operations within that sector sectors can be locked in-system or via programming equipment temporary sector unprotect feature allows code changes in previously locked sectors n unlock bypass program command reduces overall programming time when issuing multiple program command sequences n top or bottom boot block configurations available n embedded algorithms embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors embedded program algorithm automatically writes and verifies data at specified addresses n minimum 1,000,000 write cycle guarantee per sector n compatibility with jedec standards pinout and software compatible with single- power supply flash superior inadvertent write protection n data# polling and toggle bits provides a software method of detecting program or erase operation completion n ready/busy# pin (ry/by#) provides a hardware method of detecting program or erase cycle completion n erase suspend/erase resume suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation n hardware reset pin (reset#) hardware method to reset the device to reading array data
2 am29lv800b known good die supplement general description the am29lv800b in known good die (kgd) form is an 8 mbit, 3.0 volt-only flash memory. amd defines kgd as standard product in die form, tested for func- tionality and speed. amd kgd products have the same reliability and quality as amd products in packaged form. am29lv800b features the am29lv800b is an 8 mbit, 3.0 volt-only flash memory organized as 1,048,576 bytes or 524,288 words. the word-wide data (x16) appears on dq15C dq0; the byte-wide (x8) data appears on dq7Cdq0. to eliminate bus contention the device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. the device requires only a single 3.0 volt power supply for both read and write functions. internally generated and regulated voltages are provided for the program and erase operations. no v pp is required for program or erase operations. the device can also be programmed in standard eprom programmers. the device is entirely command set compatible with the jedec single-power-supply flash standard . com- mands are written to the command register using stan- dard microprocessor write timings. register contents serve as input to an internal state-machine that con- trols the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithman internal algorithm that auto- matically times the program pulse widths and verifies proper cell margin. the unlock bypass mode facili- tates faster programming times by requiring only two write cycles to program data instead of four. device erasure occurs by executing the erase command sequence. this initiates the embedded erase algorithman internal algorithm that automati- cally preprograms the array (if it is not already pro- grammed) before executing the erase operation. during erase, the device automatically times the erase pulse widths and verifies proper cell margin. the host system can detect whether a program or erase operation is complete by observing the ry/by# pin, or by reading the dq7 (data# polling) and dq6 (toggle) status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write opera- tions during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. this can be achieved in-system or via pro- gramming equipment. the erase suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the reset# pin may be tied to the system reset circuitry. a system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the flash memory. the device offers two power-saving features. when addresses have been stable for a specified amount of time, the device enters the automatic sleep mode . the system can also place the device into the standby mode . power consumption is greatly reduced in both these modes. amds flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effective- ness. the device electrically erases all bits within a sector simultaneously via fowler-nor dheim tun- neling. the data is programmed using hot electron injection. electrical specifications refer to the am29lv800b data sheet, publication number 21490, for full electrical specifications on the am29lv800b in kgd form.
am29lv800b known good die 3 supplement product selector guide die photograph family part number am29lv800b kgd speed option (v cc = 2.7 C 3.6 v) -90 -120 max access time, t acc (ns) 90 120 max ce# access, t ce (ns) 90 120 max oe# access, t oe (ns) 35 50 orientation relative to top left corner of gel-pak orientation relative to leading edge of tape and reel
4 am29lv800b known good die supplement die pad locations 2 1 44 43 42 41 40 39 38 37 35 34 13 14 15 16 17 18 19 20 21 22 23 27 28 29 30 amd logo location 31 32 33 10 11 12 9876543 36 24 25 26
am29lv800b known good die 5 supplement pad description note: the coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment. pad signal pad center (mils) pad center (millimeters) xyxy 1v cc 0.00 0.00 0.0000 0.0000 2dq4 C12.74 0.00 C0.3235 0.0000 3 dq12 C18.96 0.00 C0.4817 0.0000 4 dq5 C25.11 0.00 C0.6377 0.0000 5 dq13 C31.33 0.00 C0.7959 0.0000 6 dq6 C37.48 0.00 C0.9519 0.0000 7 dq14 C43.71 0.00 C1.1101 0.0000 8 dq7 C49.85 0.00 C1.2661 0.0000 9 dq15/aC1 C56.08 0.00 C1.4243 0.0000 10 v ss C66.01 C1.69 C1.6767 C0.0430 11 byte# C66.01 C12.30 C1.6767 C0.3123 12 a16 C66.01 C22.92 C1.6767 C0.5822 13 a15 C65.65 C266.81 C1.6674 C6.7770 14 a14 C59.50 C266.81 C1.5114 C6.7770 15 a13 C53.80 C266.81 C1.3664 C6.7770 16 a12 C47.65 C266.81 C1.2104 C6.7770 17 a11 C41.95 C266.81 C1.0654 C6.7770 18 a10 C35.80 C266.81 C0.9094 C6.7770 19 a9 C30.09 C266.55 C0.7644 C6.7704 20 a8 C23.85 C266.81 C0.6059 C6.7770 21 we# C18.15 C266.81 C0.4609 C6.7770 22 reset# C8.06 C270.78 C0.2047 C6.8778 23 ry/by# 10.07 C270.78 0.2558 C6.8778 24 a18 20.14 C266.81 0.5116 C6.7770 25 a17 25.85 C266.81 0.6566 C6.7770 26 a7 31.99 C266.81 0.8126 C6.7770 27 a6 37.70 C266.81 0.9576 C6.7770 28 a5 43.84 C266.81 1.1136 C6.7770 29 a4 49.55 C266.81 1.2586 C6.7770 30 a3 55.69 C266.81 1.4146 C6.7770 31 a2 61.40 C266.81 1.5596 C6.7770 32 a1 67.54 C266.81 1.7156 C6.7770 33 a0 67.91 C23.08 1.7249 C0.5862 34 ce# 67.91 C12.45 1.7249 C0.3163 35 v ss 67.91 C1.91 1.7249 C0.0484 36 oe# 58.00 2.27 1.4732 0.0576 37 dq0 50.02 0.00 1.2705 0.0000 38 dq8 43.79 0.00 1.1123 0.0000 39 dq1 37.65 0.00 0.9563 0.0000 40 dq9 31.42 0.00 0.7981 0.0000 41 dq2 25.28 0.00 0.6421 0.0000 42 dq10 19.05 0.00 0.4839 0.0000 43 dq3 12.91 0.00 0.3279 0.0000 44 dq11 6.68 0.00 0.1697 0.0000
6 am29lv800b known good die supplement ordering information standard products amd standard products are available in several packages and operating ranges. the order number (valid combination) is formed by a combination of the following: valid combinations valid combinations list configurations planned to be sup- ported in volume for this device. consult the local amd sales office to confirm availability of specific valid combinations and to check on newly released combinations. am29lv800b device number/description am29lv800b known good die 8 megabit (1 m x 8-bit/512 k x 16-bit) cmos flash memorydie revision 1 3.0 volt-only program and erase -90 dp c 1 die revision this number refers to the specific amd manufacturing process and product technology reflected in this document. it is entered in the revision field of amd standard product nomenclature. temperature range c = commercial (0 c to +70 c) i = industrial (C40 c to +85 c) die thickness 5 = 500 m m package type and minimum order quantity* dp = waffle pack die per 5 tray stack dg = gel-pak ? die tray die per 6 tray stack dt = surftape? (tape and reel) die per 7-inch reel dw = gel-pak ? wafer tray (sawn wafer on frame) call amd sales office for minimum order quantity * contact an amd representative for quantities. speed option see product selector guide and valid combinations boot code sector architecture t = top sector b = bottom sector t 5 valid combinations am29lv800bt-90 am29lv800bb-90 dpc 1, dpi 1, dgc 1, dgi 1, dtc 1, dti 1, dwc 1, dwi 1 am29lv800bt-120 am29lv800bb-120
am29lv800b known good die 7 supplement product test flow figure 1 provides an overview of amds known good die test flow. for more detailed information, refer to the am29lv800b product qualification database supple- ment for kgd. amd implements quality assurance pro- cedures throughout the product test flow. in addition, an off-line quality monitoring program (qmp) further guarantees amd quality standards are met on known good die products. these qa procedures also allow amd to produce kgd products without requiring or implementing burn-in. figure 1. amd kgd product test flow wafer sort 1 bake 24 hours at 250 c wafer sort 2 wafer sort 3 high temperature packaging for shipment shipment dc parameters functionality programmability erasability data retention dc parameters functionality programmability erasability dc parameters functionality programmability erasability speed incoming inspection wafer saw die separation 100% visual inspection die pack
8 am29lv800b known good die supplement physical specifications die dimensions . . . . . . . . . . . . . . 147 mils x 293 mils . . . . . . . . . . . . . . . . . . . . . . . . . . 3.74 mm x 7.45 mm die thickness . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils bond pad size . . . . . . . . . . . . . . 3.94 mils x 3.94 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 m m x 100 m m pad area free of passivation . . . . . . . . . .15.52 mils 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 m m 2 pads per die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 bond pad metalization . . . . . . . . . . . . . . . . . . al/cu/si die backside . . . . . . . . . . . . . . . . . . . . . . . . no metal, may be grounded (optional) passivation. . . . . . . . . . . . . . . . . . nitride/sog/nitride dc operating conditions v cc (supply voltage) . . . . . . . . . . . . . . . 2.7 v to 3.6 v operating temperature commercial . . . . . . . . . . . . . . . . . . . 0 c to +70 c industrial . . . . . . . . . . . . . . . . . . . C40 c to +85 c manufacturing information manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . fasl test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . sdc manufacturing id (top boot) . . . . . . . . . . . . . 98925ak (bottom boot). . . . . . . . .98925abk preparation for shipment . . . . . . . . penang, malaysia fabrication process . . . . . . . . . . . . . . . . . . . . . . cs39 die revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 special handling instructions processing do not expose kgd products to ultraviolet light or process them at temperatures greater than 250 c. failure to adhere to these handling instructions will result in irreparable damage to the devices. for best yield, amd recommends assembly in a class 10k clean room with 30% to 60% relative humidity. storage store at a maximum temperature of 30 c in a nitrogen- purged cabinet or vacuum-sealed bag. observe all standard esd handling procedures.
am29lv800b known good die 9 supplement terms and conditions of sale for amd non-volatile memory die all transactions relating to amd products under this agreement shall be subject to amds standard terms and conditions of sale, or any revisions thereof, which revisions amd reserves the right to make at any time and from time to time. in the event of conflict between the provisions of amds standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. amd warrants articles of its manufacture against defective materials or workmanship for a period of ninety (90) days from date of shipment. this warranty does not extend beyond amds customer, and does not extend to die which has been affixed onto a board or substrate of any kind. the liability of amd under this warranty is limited, at amds option, solely to repair or to replacement with equivalent articles, or to make an appropriate credit adjustment not to exceed the original sales price, for articles returned to amd, provided that: (a) the buyer promptly notifies amd in writing of each and every defect or nonconformity in any article for which buyer wishes to make a warranty claim against amd; (b) buyer obtains authorization from amd to return the article; (c) the article is returned to amd, transportation charges paid by amd, f.o.b. amds fac- tory; and (d) amds examination of such article dis- closes to its satisfaction that such alleged defect or nonconformity actually exists and was not caused by negligence, misuse, improper installation, accident or unauthorized repair or alteration by an entity other than amd. the aforementioned provisions do not extend the original warranty period of any article which has either been repaired or replaced by amd. this warranty is expressed in lieu of all other warranties, expressed or implied, including the implied warranty of fitness for a particular purpose, the implied warranty of merchantability and of all other obligations or liabilities on amds part, and it neither assumes nor autho- rizes any other person to assume for amd any other liabilities. the foregoing constitutes the buyers sole and exclu- sive remedy for the furnishing of defec- tive or non conforming articles and amd shall not in any event be liable for damages by reason of failure of any product to function properly or for any special, indirect, consequential, inci- dental or exemplary damages, including but not limited to, loss of profits, loss of use or cost of labor by reason of the fact that such articles shall have been defective or non conforming. buyer agrees that it will make no warranty representa- tions to its customers which exceed those given by amd to buyer unless and until buyer shall agree to indemnify amd in writing for any claims which exceed amds warranty. buyer assumes all responsibility for successful die prep, die attach and wire bonding pro- cesses. due to the unprotected nature of the amd products which are the subject hereof, amd assumes no responsibility for environmental effects on die. amd products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can reason- ably be expected to result in a personal injury. buyers use of amd products for use in life support applications is at buyers own risk and buyer agrees to fully indem- nify amd for any damages resulting in such use or sale. revision summary for am29lv800b known good die revision b formatted to match current template. updated distinc- tive characteristics and general description sections using the current main data sheet. updated for cs39 process technology. revision b+1 distinctive characteristics changed read and program/erase current to match data sheet. pad description corrected signal names for pads 13C44. replaced values for all pad coordinates. trademarks copyright ? 1998 advanced micro devices, inc. all rights reserved. amd, the amd logo, and combinations thereof are registered trademarks of advanced micro devices, inc. product names used in this publication are for identification purposes only and may be trademarks of their respective companies .


▲Up To Search▲   

 
Price & Availability of AM29LV800BB-90DW5C

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X